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TUNNELING IN BASE-EMITTER JUNCTIONS
被引:51
作者
:
STORK, JMC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SILICON PROC FACIL,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SILICON PROC FACIL,YORKTOWN HTS,NY 10598
STORK, JMC
[
1
]
ISAAC, RD
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SILICON PROC FACIL,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SILICON PROC FACIL,YORKTOWN HTS,NY 10598
ISAAC, RD
[
1
]
机构
:
[1]
IBM CORP,THOMAS J WATSON RES CTR,SILICON PROC FACIL,YORKTOWN HTS,NY 10598
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1983年
/ 30卷
/ 11期
关键词
:
D O I
:
10.1109/T-ED.1983.21333
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1527 / 1534
页数:8
相关论文
共 17 条
[1]
PROPOSED PROCESS MODIFICATIONS FOR DYNAMIC BIPOLAR MEMORY TO REDUCE EMITTER-BASE LEAKAGE CURRENT
[J].
ANTIPOV, I
论文数:
0
引用数:
0
h-index:
0
ANTIPOV, I
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(08)
:1649
-1654
[2]
CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS
[J].
BACCARANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY
BACCARANI, G
;
JACOBONI, C
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY
JACOBONI, C
;
MAZZONE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY
MAZZONE, AM
.
SOLID-STATE ELECTRONICS,
1977,
20
(01)
:5
-10
[3]
FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM
[J].
BUTURLA, EM
论文数:
0
引用数:
0
h-index:
0
BUTURLA, EM
;
COTTRELL, PE
论文数:
0
引用数:
0
h-index:
0
COTTRELL, PE
;
GROSSMAN, BM
论文数:
0
引用数:
0
h-index:
0
GROSSMAN, BM
;
SALSBURG, KA
论文数:
0
引用数:
0
h-index:
0
SALSBURG, KA
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1981,
25
(04)
:218
-231
[4]
INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS
[J].
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
;
MCKAY, KG
论文数:
0
引用数:
0
h-index:
0
MCKAY, KG
.
PHYSICAL REVIEW,
1957,
106
(03)
:418
-426
[5]
ZENER AND AVALANCHE BREAKDOWN IN AS-IMPLANTED LOW-VOLTAGE SI N-P JUNCTIONS
[J].
FAIR, RB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,SEMICONDUCTOR DEVICE LAB,READING,PA 19604
FAIR, RB
;
WIVELL, HW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,SEMICONDUCTOR DEVICE LAB,READING,PA 19604
WIVELL, HW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(05)
:512
-518
[6]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[7]
THERMODYNAMIC CONSIDERATIONS OF P-N-JUNCTION CAPACITANCE
[J].
HEALD, DL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
HEALD, DL
;
ORDUNG, PF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
ORDUNG, PF
;
SKALNIK, JG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
SKALNIK, JG
;
NANSEN, EN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
NANSEN, EN
.
SOLID-STATE ELECTRONICS,
1973,
16
(09)
:1055
-1065
[8]
ZENER TUNNELING IN SEMICONDUCTORS
[J].
KANE, EO
论文数:
0
引用数:
0
h-index:
0
KANE, EO
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1959,
12
(02)
:181
-188
[9]
POTENTIAL AND ELECTRIC-FIELD AT METALLURGICAL BOUNDARY OF AN ABRUPT P-N SEMICONDUCTOR JUNCTION
[J].
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT ELECTR ENGN,GAINESVILLE,FL
KENNEDY, DP
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
:988
-994
[10]
COMPARISON OF LEAKAGE CURRENTS IN ION-IMPLANTED AND DIFFUSED P-N-JUNCTIONS
[J].
KIRCHER, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, Yorktown Hts, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, Yorktown Hts, NY 10598 USA
KIRCHER, CJ
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(05)
:2167
-2173
←
1
2
→
共 17 条
[1]
PROPOSED PROCESS MODIFICATIONS FOR DYNAMIC BIPOLAR MEMORY TO REDUCE EMITTER-BASE LEAKAGE CURRENT
[J].
ANTIPOV, I
论文数:
0
引用数:
0
h-index:
0
ANTIPOV, I
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(08)
:1649
-1654
[2]
CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS
[J].
BACCARANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY
BACCARANI, G
;
JACOBONI, C
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY
JACOBONI, C
;
MAZZONE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY
MAZZONE, AM
.
SOLID-STATE ELECTRONICS,
1977,
20
(01)
:5
-10
[3]
FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM
[J].
BUTURLA, EM
论文数:
0
引用数:
0
h-index:
0
BUTURLA, EM
;
COTTRELL, PE
论文数:
0
引用数:
0
h-index:
0
COTTRELL, PE
;
GROSSMAN, BM
论文数:
0
引用数:
0
h-index:
0
GROSSMAN, BM
;
SALSBURG, KA
论文数:
0
引用数:
0
h-index:
0
SALSBURG, KA
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1981,
25
(04)
:218
-231
[4]
INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS
[J].
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
;
MCKAY, KG
论文数:
0
引用数:
0
h-index:
0
MCKAY, KG
.
PHYSICAL REVIEW,
1957,
106
(03)
:418
-426
[5]
ZENER AND AVALANCHE BREAKDOWN IN AS-IMPLANTED LOW-VOLTAGE SI N-P JUNCTIONS
[J].
FAIR, RB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,SEMICONDUCTOR DEVICE LAB,READING,PA 19604
FAIR, RB
;
WIVELL, HW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,SEMICONDUCTOR DEVICE LAB,READING,PA 19604
WIVELL, HW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(05)
:512
-518
[6]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[7]
THERMODYNAMIC CONSIDERATIONS OF P-N-JUNCTION CAPACITANCE
[J].
HEALD, DL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
HEALD, DL
;
ORDUNG, PF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
ORDUNG, PF
;
SKALNIK, JG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
SKALNIK, JG
;
NANSEN, EN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106
NANSEN, EN
.
SOLID-STATE ELECTRONICS,
1973,
16
(09)
:1055
-1065
[8]
ZENER TUNNELING IN SEMICONDUCTORS
[J].
KANE, EO
论文数:
0
引用数:
0
h-index:
0
KANE, EO
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1959,
12
(02)
:181
-188
[9]
POTENTIAL AND ELECTRIC-FIELD AT METALLURGICAL BOUNDARY OF AN ABRUPT P-N SEMICONDUCTOR JUNCTION
[J].
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT ELECTR ENGN,GAINESVILLE,FL
KENNEDY, DP
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
:988
-994
[10]
COMPARISON OF LEAKAGE CURRENTS IN ION-IMPLANTED AND DIFFUSED P-N-JUNCTIONS
[J].
KIRCHER, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, Yorktown Hts, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, Yorktown Hts, NY 10598 USA
KIRCHER, CJ
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(05)
:2167
-2173
←
1
2
→