LOW-TEMPERATURE MAGNETIC-PROPERTIES OF SUBMETALLIC PHOSPHOROUS-DOPED SILICON

被引:32
作者
MURAYAMA, CT
CLARK, WG
SANNY, J
机构
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 11期
关键词
D O I
10.1103/PhysRevB.29.6063
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:6063 / 6073
页数:11
相关论文
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