THE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON

被引:34
作者
REINELT, M [1 ]
KALBITZER, S [1 ]
MULLER, G [1 ]
机构
[1] MESSERSCHMITT BOELKOW BLOHM GMBH,D-8000 MUNCHEN 80,FED REP GER
关键词
D O I
10.1016/0022-3093(83)90548-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:169 / 172
页数:4
相关论文
共 13 条
[1]  
BEYER W, 1982, J APPL PHYS, V53, P8145
[2]  
BOHRINGER K, COMMUNICATION
[3]   SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J].
CARLSON, DE ;
MAGEE, CW .
APPLIED PHYSICS LETTERS, 1978, 33 (01) :81-83
[4]  
DAMJANTSCHITSCH H, 1983, 6TH P INT C ION BEAM
[5]  
Fromm E., 1976, GASE KOHLENSTOFF MET
[6]   HYDROGEN CONTENT, ELECTRICAL-PROPERTIES AND STABILITY OF GLOW-DISCHARGE AMORPHOUS SILICON [J].
JONES, DI ;
GIBSON, RA ;
LECOMBER, PG ;
SPEAR, WE .
SOLAR ENERGY MATERIALS, 1979, 2 (01) :93-106
[7]  
KALBITZER S, 4 P EC PHOT C, P163
[8]   DIFFUSION OF ANTIMONY OUT OF GERMANIUM AND SOME PROPERTIES OF THE ANTIMONY-GERMANIUM SYSTEM [J].
MILLER, RC ;
SMITS, FM .
PHYSICAL REVIEW, 1957, 107 (01) :65-70
[9]  
MULLER G, 1983, J NONCRYST SOLIDS, V59, P469
[10]   MIGRATION OF INERT GASES IN IONIC CRYSTALS [J].
NORGETT, MJ ;
LIDIARD, AB .
PHILOSOPHICAL MAGAZINE, 1968, 18 (156) :1193-&