EDGE CHANNELS AND THE ROLE OF CONTACTS IN THE QUANTUM HALL REGIME

被引:75
作者
MULLER, G [1 ]
WEISS, D [1 ]
KOCH, S [1 ]
VONKLITZING, K [1 ]
NICKEL, H [1 ]
SCHLAPP, W [1 ]
LOSCH, R [1 ]
机构
[1] DEUTSCH BUNDESPOST,FORSCHUNGSINST,W-6100 DARMSTADT,GERMANY
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 12期
关键词
D O I
10.1103/PhysRevB.42.7633
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The vanishing voltage drop Uxx in the quantum Hall regime is destroyed if barriers with reduced filling factors are introduced between the potential probes. We investigated a system with two barriers created by Schottky gates that are separated by up to 200 m. Two metallic contacts could be electrically connected or disconnected to the system in the region between the barriers. The change from adiabatic to equilibrated transport demonstrates the importance of Ohmic contacts as energy and phase-randomizing reservoirs. The experiments show strong evidence for current-carrying edge states. © 1990 The American Physical Society.
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页码:7633 / 7636
页数:4
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