ASYMMETRIC 2-STEP GAALAS QUANTUM-WELL FOR CASCADED 2ND-ORDER PROCESSES

被引:16
作者
KELAIDIS, C
HUTCHINGS, DC
ARNOLD, JM
机构
[1] Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow
关键词
D O I
10.1109/3.362705
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An asymmetric two-step GaAlAs quantum-well suitable for applications that employ the cascading second-order nonlinear effect is proposed. The existence of a large chi(zzz)((2))(d(33)) second-order susceptibility tenser based on transitions between the light hole and the conduction band at a wavelength of 1.55 mu m is demonstrated. The expression for chi(zzz)((2)) is obtained using the density matrix formalism and the envelope function approximation including the valence band-mixing model. The magnitude of the chi(zzz)((2)) is estimated to be of the same order as that of the bulk GaAs material and chi(zzz)((2)).
引用
收藏
页码:2998 / 3005
页数:8
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