GROWTH AND PATTERNING OF GAAS/GE SINGLE-CRYSTAL LAYERS ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：44

作者：

SHELDON, P

JONES, KM

HAYES, RE

TSAUR, BY

FAN, JCC

机构：

[1] UNIV COLORADO, DEPT ELECT ENGN, BOULDER, CO 80309 USA

[2] MIT, LINCOLN LAB, LEXINGTON, MA 02173 USA

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.95170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：274 / 276

页数：3

共 5 条

[1] INTERFACE MORPHOLOGY OF EPITAXIAL-GROWTH OF GE ON GAAS AND GAAS ON GE BY MOLECULAR-BEAM EPITAXY [J].

CHANG, CA .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1253-1255

[2] SELECTIVE LIFT-OFF FOR PREFERENTIAL GROWTH WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

DILORENZO, JV ;

MAHONEY, GE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) :1186-1187

[3] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J].

GALE, RP ;

FAN, JCC ;

TSAUR, BY ;

TURNER, GW ;

DAVIS, FM .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :169-171

[4] A STUDY OF GE-GAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

STALL, RA ;

WOOD, CEC ;

BOARD, K ;

DANDEKAR, N ;

EASTMAN, LF ;

DEVLIN, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4062-4069

[5] ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS [J].

STRINGFELLOW, GB ;

HALL, HT .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :201-226

← 1 →