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FABRICATION OF 3 TERMINAL DEVICES VIA A WHOLE-WAFER PROCESSING ROUTE

被引：18
作者：
AMIN, H
BLAMIRE, MG
PAGE, K
EVETTS, JE
机构：
[1] Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB2 3QZ, Pembroke Street
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1991年 / 27卷 / 02期
关键词：
D O I：
10.1109/20.133878
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using a whole-wafer route, we have fabricated high quality three terminal Nb(AlO(x))Nb(AlO(x))Nb devices with lead connections to each of the Nb layers, the middle Nb layer being of the order of 10nm thick. We describe here in detail the adopted processing route, and report briefly on recent results showing the junctions, independently biased, behaving as strongly coupled oscillators.
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页码：3145 / 3148
页数：4
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