SIMPLIFIED HIGH-EFFICIENCY SILICON CELL PROCESSING

被引：12

作者：

BASORE, PA

GEE, JM

BUCK, ME

SCHUBERT, WK

RUBY, DS

机构：

[1] Sandia National Laboratories, Photovoltaic System Components Dept., Dept. 6213, Albuquerque

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 34卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90028-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We developed an emitter diffusion process that yields a near-ideal doping profile with a passivating oxide in a single furnace step. Because this process subjects the material to only one high-temperature thermal excursion, bulk lifetime is better preserved. This is especially true for lower-cost silicon materials containing a high concentration of oxygen or carbon. Using this process, we routinely obtain one-sun cell efficiencies over 19% on float-zone material and over 18% on Czochralski material. Using solar-grade Czochralski material, we have demonstrated record efficiencies of 18.3% at one sun and 20.0% under concentration. Simple processes that yield high-performance diffusion profiles are expected to become increasingly important as manufacturers adopt improved techniques for ohmic contacts.

引用

页码：91 / 100

页数：10