LIQUID-PHASE EPITAXIAL-GROWTH OF THIN GAAS LAYERS FROM SUPERCOOLED SOLUTIONS

被引:12
作者
MIHARA, M [1 ]
TOYODA, N [1 ]
HARA, T [1 ]
机构
[1] MATSUSHITA RES INST TOKYO INC,KAWASAKI,JAPAN
关键词
D O I
10.1063/1.88380
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:131 / 133
页数:3
相关论文
共 4 条
[1]  
HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7
[2]  
Minden H. T., 1970, Journal of Crystal Growth, V6, P228, DOI 10.1016/0022-0248(70)90071-0
[3]   COMPARISON OF THEORY AND EXPERIMENT FOR LPE LAYER THICKNESS OF GAAS AND GAAS ALLOYS [J].
MOON, RL ;
KINOSHITA, J .
JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) :149-154
[4]   SURFACE MORPHOLOGY OF LIQUID-PHASE EPITAXIAL LAYERS [J].
SAUL, RH ;
ROCCASECCA, DD .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :1983-1988