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SPACE-CHARGE SPECTROSCOPY OF THE GAP STATES IN HYDROGENATED AMORPHOUS-SILICON COUNTERDOPED WITH BORON

被引：10
作者：
CULLEN, P
HARBISON, JP
LANG, DV
ADLER, D
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期
关键词：
D O I：
10.1016/0022-3093(83)90571-9
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：261 / 264
页数：4
相关论文
共 4 条
[1]   IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].
COHEN, JD ;
HARBISON, JP ;
WECHT, KW .
PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112
[2]   CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].
COHEN, JD ;
LANG, DV .
PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350
[3]   MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].
LANG, DV ;
COHEN, JD ;
HARBISON, JP .
PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320
[4]   DEFECT STATES IN DOPED AND COMPENSATED A-SI-H [J].
STREET, RA ;
BIEGELSEN, DK ;
KNIGHTS, JC .
PHYSICAL REVIEW B, 1981, 24 (02) :969-984
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