TRANSMISSION ELECTRON-MICROSCOPIC OBSERVATION OF ALN/ALPHA-AL2O3 HETEROEPITAXIAL INTERFACE WITH INITIAL-NITRIDING AIN LAYER

被引：38

作者：

MASU, K ^{[1
]}

NAKAMURA, Y ^{[1
]}

YAMAZAKI, T ^{[1
]}

SHIBATA, T ^{[1
]}

TAKAHASHI, M ^{[1
]}

TSUBOUCHI, K ^{[1
]}

机构：

[1] NGK INSULATORS LTD,CORP RES & DEV GRP,MIZUHO KU,NAGOYA,AICHI 467,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 6B期

关键词：

ALN; A-AL2O3; TEM; HETEROEPITAXIAL INTERFACE; MO-CVD; INITIAL NITRIDING METHOD;

D O I：

10.1143/JJAP.34.L760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The AlN/alpha-Al2O3 heteroepitaxial interface is investigated using a transmission electron microscope. The epitaxial AlN film is deposited by metalorganic chemical vapor deposition with and without initial nitriding. The initial nitriding method is to convert the alpha-Al2O3 substrate surface to a nanometer-thick AlN single-crystal buffer layer in NH3 ambient just before AlN deposition. The (1 ($) over bar 210)AlN/(1 ($) over bar 102) alpha-Al2O3 interface with initial nitriding is found to be atomically flat, and no dislocation inside the postdeposited AIN is observed. We have confirmed that initial nitriding is excellent in improving the crystal quality of the AlN epitaxial layer.

引用

页码：L760 / L763

页数：4

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