FIELD-EFFECT TRANSISTORS BASED ON POLY(P-PHENYLENE VINYLENE) DOPED BY ION-IMPLANTATION

被引：31

作者：

PICHLER, K ^{[1
]}

JARRETT, CP ^{[1
]}

FRIEND, RH ^{[1
]}

RATIER, B ^{[1
]}

MOLITON, A ^{[1
]}

机构：

[1] UNIV LIMOGES,FAC SCI,LEPOFI,F-87060 LIMOGES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 07期

关键词：

D O I：

10.1063/1.358647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated metal-insulator-semiconductor field-effect transistors (MISFETs), with thin films of polycrystalline poly(p-phenylene vinylene) (PPV) as the semiconducting layer and report here the successful operation of a PPV MISFET based on the p-type doping of the polymer layer by ion implantation of iodine. The measured field-effect mobility of the charge carriers in this ion- implanted PPV is in the range of 10-7 to 10-8 cm 2/V s. These values are in the same range as those obtained from a PPV MISFET in which the PPV was doped from the gas phase. © 1995 American Institute of Physics.

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页码：3523 / 3527

页数：5

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