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IN PRAISE OF THE CONFINED VERTICAL GROWTH OF SEMICONDUCTORS
被引:4
作者
:
HOROWITZ, A
论文数:
0
引用数:
0
h-index:
0
机构:
BEN GURION UNIV NEGEV,DEPT PHYS,IL-84105 BEERSHEBA,ISRAEL
BEN GURION UNIV NEGEV,DEPT PHYS,IL-84105 BEERSHEBA,ISRAEL
HOROWITZ, A
[
1
]
HOROWITZ, YS
论文数:
0
引用数:
0
h-index:
0
机构:
BEN GURION UNIV NEGEV,DEPT PHYS,IL-84105 BEERSHEBA,ISRAEL
BEN GURION UNIV NEGEV,DEPT PHYS,IL-84105 BEERSHEBA,ISRAEL
HOROWITZ, YS
[
1
]
机构
:
[1]
BEN GURION UNIV NEGEV,DEPT PHYS,IL-84105 BEERSHEBA,ISRAEL
来源
:
MATERIALS RESEARCH BULLETIN
|
1986年
/ 21卷
/ 09期
关键词
:
D O I
:
10.1016/0025-5408(86)90229-1
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:1123 / 1129
页数:7
相关论文
共 44 条
[1]
GROWTH OF LOW STRAIN GAP BY LIQUID-ENCAPSULATION - VERTICAL-GRADIENT FREEZE TECHNIQUE
[J].
BLUM, SE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BLUM, SE
;
CHICOTKA, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CHICOTKA, RJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(04)
:588
-589
[2]
VERTICAL GRADIENT FREEZE GROWTH OF GALLIUM-ARSENIDE AND NAPHTHALENE - THEORY AND PRACTICE
[J].
CHANG, CE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
CHANG, CE
;
YIP, VFS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
YIP, VFS
;
WILCOX, WR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
WILCOX, WR
.
JOURNAL OF CRYSTAL GROWTH,
1974,
22
(04)
:247
-258
[3]
CONTROL OF INTERFACE SHAPE IN VERTICAL BRIDGMAN-STOCKBARGER TECHNIQUE
[J].
CHANG, CE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CHEM ENGN DEPT,LOS ANGELES,CA 90007
CHANG, CE
;
WILCOX, WR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CHEM ENGN DEPT,LOS ANGELES,CA 90007
WILCOX, WR
.
JOURNAL OF CRYSTAL GROWTH,
1974,
21
(01)
:135
-140
[4]
RADIAL SEGREGATION INDUCED BY NATURAL-CONVECTION AND MELT SOLID INTERFACE SHAPE IN VERTICAL BRIDGMAN GROWTH
[J].
CHANG, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, DEPT CHEM ENGN, CAMBRIDGE, MA 02139 USA
CHANG, CJ
;
BROWN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, DEPT CHEM ENGN, CAMBRIDGE, MA 02139 USA
BROWN, RA
.
JOURNAL OF CRYSTAL GROWTH,
1983,
63
(02)
:343
-364
[5]
DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS
[J].
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
;
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
HOLMES, DE
.
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(01)
:111
-124
[6]
CHENG GC, 1985, J CRYSTAL GROWTH, V37, P417
[7]
SOLIDIFICATION BEHAVIOR OF LOW AND HIGH THERMAL-CONDUCTIVITY MATERIALS IN A BRIDGMAN-STOCKBARGER FURNACE
[J].
EJIM, TI
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV VIRGINIA,DEPT MAT SCI,CHARLOTTESVILLE,VA 22901
EJIM, TI
;
JESSER, WA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV VIRGINIA,DEPT MAT SCI,CHARLOTTESVILLE,VA 22901
JESSER, WA
;
FRIPP, AL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV VIRGINIA,DEPT MAT SCI,CHARLOTTESVILLE,VA 22901
FRIPP, AL
.
JOURNAL OF CRYSTAL GROWTH,
1984,
69
(2-3)
:509
-514
[8]
LOW DISLOCATION DENSITY, LARGE DIAMETER, LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS
[J].
ELLIOT, AG
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
ELLIOT, AG
;
WEI, CL
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
WEI, CL
;
FARRARO, R
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
FARRARO, R
;
WOOLHOUSE, G
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
WOOLHOUSE, G
;
SCOTT, M
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
SCOTT, M
;
HISKES, R
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HISKES, R
.
JOURNAL OF CRYSTAL GROWTH,
1984,
70
(1-2)
:169
-178
[9]
VERTICAL BRIDGMAN GROWTH OF CDGEAS2 WITH CONTROL OF INTERFACE SHAPE AND ORIENTATION
[J].
FEIGELSON, RS
论文数:
0
引用数:
0
h-index:
0
FEIGELSON, RS
;
ROUTE, RK
论文数:
0
引用数:
0
h-index:
0
ROUTE, RK
.
JOURNAL OF CRYSTAL GROWTH,
1980,
49
(02)
:261
-273
[10]
A STUDY OF MICRODEFECTS IN N-TYPE DOPED GAAS CRYSTALS USING CATHODOLUMINESCENCE AND X-RAY TECHNIQUES
[J].
FORNARI, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
FORNARI, R
;
FRANZOSI, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
FRANZOSI, P
;
SALVIATI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
SALVIATI, G
;
论文数:
引用数:
h-index:
机构:
FERRARI, C
;
GHEZZI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
GHEZZI, C
.
JOURNAL OF CRYSTAL GROWTH,
1985,
72
(03)
:717
-725
←
1
2
3
4
5
→
共 44 条
[1]
GROWTH OF LOW STRAIN GAP BY LIQUID-ENCAPSULATION - VERTICAL-GRADIENT FREEZE TECHNIQUE
[J].
BLUM, SE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BLUM, SE
;
CHICOTKA, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CHICOTKA, RJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(04)
:588
-589
[2]
VERTICAL GRADIENT FREEZE GROWTH OF GALLIUM-ARSENIDE AND NAPHTHALENE - THEORY AND PRACTICE
[J].
CHANG, CE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
CHANG, CE
;
YIP, VFS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
YIP, VFS
;
WILCOX, WR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
WILCOX, WR
.
JOURNAL OF CRYSTAL GROWTH,
1974,
22
(04)
:247
-258
[3]
CONTROL OF INTERFACE SHAPE IN VERTICAL BRIDGMAN-STOCKBARGER TECHNIQUE
[J].
CHANG, CE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CHEM ENGN DEPT,LOS ANGELES,CA 90007
CHANG, CE
;
WILCOX, WR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CHEM ENGN DEPT,LOS ANGELES,CA 90007
WILCOX, WR
.
JOURNAL OF CRYSTAL GROWTH,
1974,
21
(01)
:135
-140
[4]
RADIAL SEGREGATION INDUCED BY NATURAL-CONVECTION AND MELT SOLID INTERFACE SHAPE IN VERTICAL BRIDGMAN GROWTH
[J].
CHANG, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, DEPT CHEM ENGN, CAMBRIDGE, MA 02139 USA
CHANG, CJ
;
BROWN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, DEPT CHEM ENGN, CAMBRIDGE, MA 02139 USA
BROWN, RA
.
JOURNAL OF CRYSTAL GROWTH,
1983,
63
(02)
:343
-364
[5]
DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS
[J].
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
;
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
HOLMES, DE
.
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(01)
:111
-124
[6]
CHENG GC, 1985, J CRYSTAL GROWTH, V37, P417
[7]
SOLIDIFICATION BEHAVIOR OF LOW AND HIGH THERMAL-CONDUCTIVITY MATERIALS IN A BRIDGMAN-STOCKBARGER FURNACE
[J].
EJIM, TI
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV VIRGINIA,DEPT MAT SCI,CHARLOTTESVILLE,VA 22901
EJIM, TI
;
JESSER, WA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV VIRGINIA,DEPT MAT SCI,CHARLOTTESVILLE,VA 22901
JESSER, WA
;
FRIPP, AL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV VIRGINIA,DEPT MAT SCI,CHARLOTTESVILLE,VA 22901
FRIPP, AL
.
JOURNAL OF CRYSTAL GROWTH,
1984,
69
(2-3)
:509
-514
[8]
LOW DISLOCATION DENSITY, LARGE DIAMETER, LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS
[J].
ELLIOT, AG
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
ELLIOT, AG
;
WEI, CL
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
WEI, CL
;
FARRARO, R
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
FARRARO, R
;
WOOLHOUSE, G
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
WOOLHOUSE, G
;
SCOTT, M
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
SCOTT, M
;
HISKES, R
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HISKES, R
.
JOURNAL OF CRYSTAL GROWTH,
1984,
70
(1-2)
:169
-178
[9]
VERTICAL BRIDGMAN GROWTH OF CDGEAS2 WITH CONTROL OF INTERFACE SHAPE AND ORIENTATION
[J].
FEIGELSON, RS
论文数:
0
引用数:
0
h-index:
0
FEIGELSON, RS
;
ROUTE, RK
论文数:
0
引用数:
0
h-index:
0
ROUTE, RK
.
JOURNAL OF CRYSTAL GROWTH,
1980,
49
(02)
:261
-273
[10]
A STUDY OF MICRODEFECTS IN N-TYPE DOPED GAAS CRYSTALS USING CATHODOLUMINESCENCE AND X-RAY TECHNIQUES
[J].
FORNARI, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
FORNARI, R
;
FRANZOSI, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
FRANZOSI, P
;
SALVIATI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
SALVIATI, G
;
论文数:
引用数:
h-index:
机构:
FERRARI, C
;
GHEZZI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY
GHEZZI, C
.
JOURNAL OF CRYSTAL GROWTH,
1985,
72
(03)
:717
-725
←
1
2
3
4
5
→