MODELING OF PLANAR VARACTOR FREQUENCY-MULTIPLIER DEVICES WITH BLOCKING BARRIERS

被引：10

作者：

LIENEWEG, U

TOLMUNEN, TJ

FRERKING, MA

MASERJIAN, J

机构：

[1] Center for Space Microelectronics Technology at the Jet Propulsion Laboratory, Cal ifornia Institute of Technology, Pasadena, CA

[2] Jet Propulsion Laboratory, Helsinki University of Technology, SF-02150, Espoo

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1992年 / 40卷 / 05期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/22.137388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Models for optimization of planar frequency triplers with symmetrical C - V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

引用

页码：839 / 845

页数：7

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