IMPROVEMENT IN JUNCTION PROPERTIES OF A N-SI/POLY(3-METHYLTHIOPHENE) RETEROJUNCTION BY POSTTREATMENT WITH AQHF

被引：10

作者：

HOSHINO, K ^{[1
]}

OGATA, T ^{[1
]}

KOKADO, H ^{[1
]}

机构：

[1] CHIBA UNIV, FAC ENGN, DEPT IMAGE SCI, INAGE KU, CHIBA 263, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9B期

关键词：

POLY(3-METHYLTHIOPHENE); HETEROJUNCTION; HF TREATMENT; N-TYPE SILICON; ORGANIC INORGANIC INTERFACE; STABILITY;

D O I：

10.1143/JJAP.34.L1241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Junction properties of an n-Si/poly(3-methylthiophene) (P3MeT) cell are investigated by current-voltage measurements. Efforts have been made to understand and improve the inorganic/organic interface. It was found that a great improvement in junction properties is possible by treating the cell with an aq. HF solution. Since electrical conductivity of P3MeT bulk is little affected by the HF treatment, the improvement is attributed to the enhancement in interactions between P3MeT and n-Si. The cell showed degradation upon exposure to air, but it recovered its original characteristics when it was again treated with an aq.HF solution.

引用

页码：L1241 / L1243

页数：3

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