1.55-MU-M BURIED HETEROSTRUCTURE LASER VIA REGROWTH OF SEMIINSULATING INP-FE AROUND VERTICAL MESAS FABRICATED BY REACTIVE ION ETCHING USING METHANE AND HYDROGEN

被引：30

作者：

KJEBON, O

LOURDUDOSS, S

HAMMARLUND, B

LINDGREN, S

RASK, M

OJALA, P

LANDGREN, G

BROBERG, B

机构：

[1] Swedish Institute of Microelectronics, Box 1084

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 03期

关键词：

DISTRIBUTED FEEDBACK LASERS; VAPOR-PHASE EPITAXY; HIGH-POWER; GROWTH;

D O I：

10.1063/1.105612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A GaInAsP/InP Fabry-Perot-type buried-heterostructure quantum well laser operating at 1.55-mu-m has been realized utilizing iron-doped semi-insulating InP around vertical mesas fabricated by reactive ion etching using methane and hydrogen. A maximum cw output power of 19 mW has been achieved on as-cleaved chips of 300-mu-m length with a quantum efficiency of 21 % per facet. Threshold currents lie between 20 and 25 mA. As low as 2-OMEGA series resistance has been measured despite an ohmic contact area not exceeding that of the 2-mu-m-wide mesa. A 3 dB bandwidth of 7.5 GHz at 12 mW output power is obtained from the small-signal frequency modulation measurements.

引用

收藏

页码：253 / 255

页数：3

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