OPTICALLY DETECTED ELECTRON-PARAMAGNETIC RESONANCE OF A VANADIUM IMPURITY IN 6H-SILICON CARBIDE

The magnetic circular dichroism of the absorption (MCDA) and optically detected electron paramagnetic resonance (EPR) of a vanadium impurity in 6H-silicon carbide were measured. Optical absorption bands observed previously in the spectral range between 7150 to 9000 cm-1 were identified as belonging to the V(Si)4+ defects on three sites in SiC, which were investigated previously with conventional EPR. From the MCDA measurements follows that the electron spin of the V(Si)4+ impurities is S = 1/2 on all three defect sites.