INDUCED NEGATIVE CONDUCTANCE IN MULTIPLE-WELL HETEROSTRUCTURES

We present a general approach to the resonant transport in multiple-well semiconductor heterostructures under an alternating external field. It is shown that in a specially prepared system one can obtain continuous absorption of energy by the carriers. As a result the system can exhibit negative-induced resistance, i.e., the direction of dc resonant current is opposite to the applied voltage. The width and maximal value of the expected resonant current is,evaluated.