EFFECTS OF POSTDEPOSITION HEAT-TREATMENTS ON ZNO/CDS/CUINSE2 THIN-FILM SOLAR-CELLS STUDIED BY PHOTOLUMINESCENCE MEASUREMENTS

被引：16

作者：

KUSHIYA, K ^{[1
]}

HAKUMA, H ^{[1
]}

SANO, H ^{[1
]}

YAMADA, A ^{[1
]}

KONAGAI, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,MEGURO KU,TOKYO 152,JAPAN

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 35卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90144-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The effects of post-deposition heat treatments on MOCVD-ZnO/Dip CdS/Selenized CuInSe2, (CIS) thin film solar cells were investigated by photoluminescence (PL) measurements. PL measurements indicate the interactions between extrinsic oxygen and a native In-Cu antisite defect for the PL peak at about 1340 nm and the presence of a native O-Se defect as a donor site probably in the grain boundary for the broad PL peak centered at around 1420 nm. Applying the post-deposition annealing of 150 degrees C for 30 min. in air after CdS deposition, 10.3% efficiency was achieved with the CIS thin film absorber selenized in vacuum with elementary Se vapor.

引用

页码：223 / 229

页数：7