SUBHARMONIC GATE MIXER BASED ON A MULTICHANNEL HEMT

被引：1

作者：

ALLAM, R

KOLANOWSKI, C

THERON, D

CROSNIER, Y

机构：

[1] Institut d’Electronique et de Microelectronique du Nord, DHS - UMR CNRS 9929, Universitédes Sciences et Technologies de Lille

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 04期

关键词：

D O I：

10.1109/75.372812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the realization and simulation of a new subharmonic gate mixer based on a multichannel HEMT, This device gives the possibility of tailoring the transconductance profile. Two peaks separated by a valley can be obtained, Biasing the device at the bottom of the valley, the IF signal comes from the mixing of the RF signal and the second LO harmonic, This mixer uses half the normal LO frequency and has a minimum conversion loss of 10 dB.

引用

页码：122 / 123

页数：2

共 4 条

[1]

Zirath H., Angelov I., Rosman N., A millimeter-wave subharmonically pumped resistive mixer based on heterostructure field effect transistor technology, IEEE MTT-S Int. Microwave 1992, (1992)

[2]

Allam R., Coupez T., Kolanowski C., Theron D., Crosnier Y., Designing and modeling multichannel HEMT gate mixer, Proc. 21st Euro. Microwave Conf., pp. 603-608, (1991)

[3]

Theron D., Bonte B., Gaquiere C., Playez E., Crosnier Y., Characterization of GaAs and InGaAs double-quantum well heterostructure FET’s, IEEE Trans. Electron Dev., ED-40, 11, pp. 1935-1941, (1993)

[4]

Dambrine G., Cappy A., Heliodore F., Playez E., A new method for determining the FET small signal equivalent circuit, IEEE Trans. Microwave Theory Tech., MTT-36, pp. 1151-1159, (1988)

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