LIMITATIONS ON STRESS COMPENSATION IN ALXGA1-XAS1-YPY-GAAS LPE LAYERS

被引：11

作者：

AFROMOWITZ, MA ^{[1
]}

RODE, DL ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 11期

关键词：

D O I：

10.1063/1.1663128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4738 / 4740

页数：3

共 10 条

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[6] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J].

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[7] ISOTHERMAL DIFFUSION-THEORY OF LPE - GAAS, GAP, BUBBLE GARNET [J].

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[8] STRESS COMPENSATION IN GA1-XALXAS1-YPY LPE LAYERS ON GAAS SUBSTRATES [J].

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Schwartz B., 1973, Proceedings of the 4th International Symposium on Gallium Arsenide and Related Compounds, P187

[10] PHASE EXTENT OF GALLIUM ARSENIDE DETERMINED BY LATTICE CONSTANT AND DENSITY METHOD [J].

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