ELECTRON-SCATTERING IN SEMICONDUCTOR ALLOYS

被引：11

作者：

RODE, DL ^{[1
]}

FEDDERS, PA ^{[1
]}

机构：

[1] WASHINGTON UNIV,DEPT PHYS,ST LOUIS,MO 63130

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 11期

关键词：

D O I：

10.1063/1.331921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6425 / 6431

页数：7

共 11 条

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[2] OPTICALLY PUMPED 1.55-MU-M DOUBLE HETEROSTRUCTURE GAXALYIN1-X-YAS/ALUIN1-UAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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CHO, AY .

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EASTMAN, LF .

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FLINN, PA .

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[5] ALLOY SCATTERING IN TERNARYIII-V COMPOUNDS [J].

HARRISON, JW ;

HAUSER, JR .

PHYSICAL REVIEW B, 1976, 13 (12) :5347-5350

[6]

Hayes J. R., 1982, GaInAsP alloy semiconductors, P189

[7]

HUMEROTHERY W, 1963, ELECTRONS ATOMS META

[8]

MARSH JH, 1982, APPL PHYS LETT, V41, P734

[9]

Rode D. L., 1975, SEMICONDUCT SEMIMET, V10, P1

[10] ELECTRON-MOBILITY IN ALXGA1-XAS [J].

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4178-4183

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