BA1-XKXBIO3 SANDWICH-TYPE TUNNEL-JUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

HELLMAN, ES ^{[1
]}

MARTIN, S ^{[1
]}

HARTFORD, EH ^{[1
]}

WERDER, DJ ^{[1
]}

ROESLER, GM ^{[1
]}

TEDROW, PM ^{[1
]}

机构：

[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

PHYSICA C | 1992年 / 201卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(92)90119-W

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown Ba1-xKxBiO3/BaBi2Oy/Ba1-xKxBiO3 trilayers by molecular beam epitaxy. Junctions made from these trilayers exhibit transport ranging from hopping conduction to superconductor-insulator-normal metal tunneling and possibly to superconductor-insulator-superconductor Josephson tunneling. Critical currents have been measured for junctions grown on (110) NdGaO3 substrates.

引用

页码：166 / 170

页数：5

共 11 条

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