DETERMINATION OF DYNAMIC PARAMETERS CONTROLLING ATOMIC-SCALE ETCHING OF SI(100)-(2X1) BY CHLORINE

被引：44

作者：

CHANDER, M ^{[1
]}

GOETSCH, DA ^{[1
]}

ALDAO, CM ^{[1
]}

WEAVER, JH ^{[1
]}

机构：

[1] UNIV MAR DEL PLATA,CONSEJO NACL INVEST CIENT & TECN,INST MAT SCI & TECHNOL,RA-7600 MAR DEL PLATA,BUENOS AIRES,ARGENTINA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.74.2014

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling microscopy shows that Cl-induced pitting of Si(100)-(2×1) is initiated by the creation of single dimer vacancies on terraces. These pits grow laterally by dimer removal either along the dimer row or from an adjacent row. Quantitative analysis of the vacancy size distribution shows that the rate constant for linear growth is 4.71 times that for branch creation at 850 K. This indicates that the difference in dimer removal energy in these two directions is 0.110.02 eV, a difference that accounts for the observed surface morphologies. © 1995 The American Physical Society.

引用

页码：2014 / 2017

页数：4

共 17 条

[1]

Boudart M, 1991, KINETICS CHEM PROCES

[2]

CHADI DJ, 1987, PHYS REV LETT, V39, P1691

[3] SI(100)-(2X1) SURFACE-DEFECTS AND DISSOCIATIVE AND NONDISSOCIATIVE ADSORPTION OF H2O STUDIED WITH SCANNING-TUNNELING-MICROSCOPY [J].