LARGE-AREA AND VISIBLE RESPONSE VPE INGAAS PHOTO-DIODES

被引:13
作者
WEBB, PP [1 ]
OLSEN, GH [1 ]
机构
[1] RCA CORP LABS,PRINCETON,NJ 08540
关键词
D O I
10.1109/T-ED.1983.21134
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:395 / 400
页数:6
相关论文
共 7 条
[1]   LARGE-AREA BACK-ILLUMINATED INGAAS-INP PHOTO-DIODES FOR USE AT 1 TO 1.6 MU-M WAVELENGTH [J].
BURRUS, CA ;
DENTAI, AG ;
LEE, TP .
OPTICS COMMUNICATIONS, 1981, 38 (02) :124-126
[2]  
HURWITZ CE, 1980, APR SPIE P FIB OPT C
[3]   SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH [J].
LEE, TP ;
BURRUS, CA ;
DENTAI, AG ;
OGAWA, K .
ELECTRONICS LETTERS, 1980, 16 (04) :155-156
[4]   VAPOR-GROWN 1.3 MU-M INGAASP-INP AVALANCHE PHOTO-DIODES [J].
OLSEN, GH ;
KRESSEL, H .
ELECTRONICS LETTERS, 1979, 15 (05) :141-142
[5]  
OLSEN GH, 1981, IEEE ELECTRON DEVICE, V2
[6]   A GA0.47IN0.53AS-INP HETEROPHOTODIODE WITH REDUCED DARK CURRENT [J].
PEARSALL, TP ;
PISKORSKI, M ;
BROCHET, A ;
CHEVRIER, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :255-259
[7]  
WILLARDSON RK, SEMICONDUCTORS SEMIM, V3