ELECTRICAL-CONDUCTIVITY AND STRUCTURE DEFECTS OF N-TYPE SEMICONDUCTOR OXIDES .2. APPLICATION TO PURE AND GALLIUM OR NIOBIUM DOPED TITANIA (ANATASE)

被引：11

作者：

HERRMANN, JM

MONTGOLFIER, PD

VERGNON, P

机构：

[1] INST RECH CATALYSE,VILLEURBANNE,FRANCE

[2] UNIV LYON 1,CNRS 231,THERMODYNAM & CINETIQUE CHIM,F-69621 VILLEURBANNE,FRANCE

来源：

JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE | 1976年 / 73卷 / 05期

关键词：

D O I：

10.1051/jcp/1976730479

中图分类号：

Q5 [生物化学]; Q7 [分子生物学];

学科分类号：

071010 ; 081704 ;

摘要：

引用

页码：479 / 484

页数：6

共 14 条

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[7] ELECTRICAL CONDUCTIVITY OF SINGLE AND POLYCRYSTALLINE NEAR-STOICHIOMETRIC RUTILE IN RANGE 600 DEGREES TO 1400 DEGREES C [J].

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[9]

HERRMANN JM, 1972, B SOC CHIM FR, P3034

[10]

HERRMANN JM, 1974, CR ACAD SCI C CHIM, V279, P83

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