A CLOSED FORM ANALYTICAL MODEL FOR THE ELECTRICAL-PROPERTIES OF MICROSTRIP INTERCONNECTS

被引：10

作者：

BOGATIN, E ^{[1
]}

机构：

[1] XINIX INC, RES & DEV, SANTA CLARA, CA USA

来源：

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1990年 / 13卷 / 02期

关键词：

Electric Networks; Lumped Parameter - Electric Networks--Network Parameters - Electronics Packaging - Integrated Circuits; CMOS - Microwave Measurements;

D O I：

10.1109/33.56155

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple model is presented based on closed form analytical approximations for the resistance, capacitance, inductance, and conductance of a generic microstrip interconnect. Working in the frequency domain, all the low frequency lumped circuit and high frequency transmission line properties can be calculated. As examples, this model is applied to high frequency reflectivity measurements on Teflon and FR4 printed circuit board microstrips. Agreement to better than 5% up to 1 GHz is obtained by using a dielectric constant of 2.20 and dissipation factor of 0.004 for the Teflon boards and dielectric constant of 4.9 at 1 MHz with a constant dissipation factor of 0.022 for the FR4 microstrips. This model is an enabling tool for packaging engineers to evaluate the possibilities of an interconnect technology very simply on their personal computers (PC's). © 1990 IEEE

引用

页码：258 / 266

页数：9

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