LASER-INDUCED DEFECTS IN GAAS-LAYERS

被引：24

作者：

WESCH, W

WENDLER, E

GOTZ, G

UNGER, K

ROPPISCHER, H

RESAGK, C

机构：

[1] KARL MARX UNIV,SEKT PHYS,DDR-7050 LEIPZIG,GER DEM REP

[2] TH ILMENAU,SEKT PHYS & TECH ELEKTR BAUELEMENTE,DDR-6300 ILMENAU,GER DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1985年 / 130卷 / 02期

关键词：

D O I：

10.1002/pssb.2221300217

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：539 / 546

页数：8

共 17 条

[1]

ANDERSON CL, 1981, MRS S LASER ELECTRON, P653

[2] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH ;

TITLE, RS ;

WEISER, K ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[4] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].

CARDONA, M ;

SHAKLEE, KL ;

POLLAK, FH .

PHYSICAL REVIEW, 1967, 154 (03) :696-+

[5] LASER ANNEALING OF ZINC IMPLANTED GAAS [J].

KULAR, SS ;

SEALY, BJ .

SOLID-STATE ELECTRONICS, 1980, 23 (08) :875-&

[6]

Lowndes D. H., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P223

[7]

MILNES AG, 1983, ADV ELECTRON EL PHYS, V61, P63

[8] THE SELECTIVE TRAPPING OF MOBILE GROUP-V INTERSTITIALS BY IMPURITIES IN ELECTRON-IRRADIATED GAAS AND GAP [J].

NEWMAN, RC ;

WOODHEAD, J .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (08) :1405-1419

[9]

SEALY BJ, 1979, J CRYSTAL GROWTH, V48, P655

[10]

SEALY BJ, 1979, AIP C SER, V50, P67

← 1 2 →