IMAGE-FORMATION IN X-RAY-LITHOGRAPHY - PROCESS OPTIMIZATION

被引：13

作者：

CERRINA, F

GUO, JZY

TURNER, S

OCOLA, L

KHAN, M

ANDERSON, P

机构：

[1] Center for X-ray Lithography and Electrical, Computer Engineering Department, University of Wisconsin-Madison, Madison

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90027-O

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optimization of the x-ray proximity lithographic process is discussed based on a complete simulation program we developed. The results show that x-ray masks are easier to make than speculated and the exposure window is very large for an optimized system.

引用

页码：135 / 140

页数：6

共 7 条

[1] Guo, Cerrina, J. Vac. Sci. and Techn., 11 A, (1991)
[2] So, Lai, Wells, Cerrina, The effect of beam emittances on x-ray lithography exposure line resolution, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 5 A, (1987)
[3] Guo, Chen, Khan, Anderson, Cerrina, J. Vac. Sci. and Techn., 11 A, (1990)
[4] Vladimirsky, Maldonado, Microelectronic Engineering, 13, (1991)
[5] Oertel, Weiss, Huber, Vladimirsky, Maldonado, SPIE, San Jose, (1991)
[6] Schattenburg, Li, Shin, Kong, Smith, J. Vac. Sci. and Techn., 11 A, (1991)
[7] Ku, Anderson, Schattenberg, Smith, Use of a pi-phase shifting x-ray mask to increase the intensity slope at feature edges, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 6 B, 1, (1988)

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