8-ELEMENT LINEAR-ARRAY MONOLITHIC P-I-N MODFET PHOTORECEIVERS USING MOLECULAR-BEAM EPITAXIAL REGROWTH

被引：2

作者：

BERGER, PR ^{[1
]}

DUTTA, NK ^{[1
]}

HUMPHREY, DA ^{[1
]}

SMITH, PR ^{[1
]}

WANG, SJ ^{[1
]}

MONTGOMERY, RK ^{[1
]}

SIVCO, D ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 01期

关键词：

D O I：

10.1109/68.185062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An 8-element linear array of single-stage integrating front-end photoreceivers using MBE regrowth was investigated. Each element was comprised of a p-i-n In0.53Ga0.47As photodiode integrated with a selectively regrown pseudomorphic In0.65Ga0.35As/In0.52Al0.48As MODFET. Cutoff frequencies of 1.0 mum discrete regrown MODFET's were f(t) = 24 GHz and f(max) = 50 GHz. Transconductance of the regrown MODFET's were as high as 495 mS/mm with a current density (I(ds)) of 250 mA/mm. The 3-dB bandwidth of the photoreceiver was measured to be 1 GHz. The bit rate sensitivity at 1 Gb/s was -31.8 dBm for BER 10(-9) using 1.55 mum excitation for a photoreceiver with an anti-reflection coating. The single-stage amplifier exhibited up to 25 dB flatband gain of the photocurrent, and a two-stage amplifier was up to 31 dB of gain. Good uniformity between each photoreceiver element in the array was achieved. Electrical crossstalk between photoreceiver elements was estimated to be approximately -34 dB.

引用

页码：63 / 66

页数：4

共 11 条

[1] A 622 MB/S MONOLITHICALLY INTEGRATED INGAAS-INP HIGH-SENSITIVITY TRANSIMPEDANCE PHOTORECEIVER AND A MULTICHANNEL RECEIVER ARRAY [J].