THERMAL CONDUCTIVITY MEASUREMENTS OF SILICON FROM 30 DEGREES TO 425 DEGREES C

被引：38

作者：

MORRIS, RG

HUST, JG

机构：

来源：

PHYSICAL REVIEW | 1961年 / 124卷 / 05期

关键词：

D O I：

10.1103/PhysRev.124.1426

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1426 / &

共 39 条

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