QUENCHING AND ENHANCEMENT OF THE EXCITON AND SUBBAND-GAP ABSORPTION IN GAAS-CR USING 2-BEAM TRANSVERSE ACOUSTOELECTRIC VOLTAGE SPECTROSCOPY

被引：10

作者：

DAVARI, B

DAS, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.93267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：807 / 809

页数：3

共 16 条

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[2] ELECTRICAL-PROPERTIES OF SEMICONDUCTOR-ELECTROLYTE (CDS-NICL2) USING SURFACE ACOUSTIC-WAVE TECHNIQUES [J].

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[3]

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[4]

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[5]

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[6] DIRECT MEASUREMENT OF PYROELECTRIC FIGURES OF MERIT OF PROPER AND IMPROPER FERROELECTRICS [J].

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[7]

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[8] PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-O [J].

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[9]

LIN AL, 1976, J APPL PHYS, V47, P1859, DOI 10.1063/1.322905

[10]

MARTIN GM, 1981, APPL PHYS LETT, V39, P748

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