CHANNELING ANALYSIS OF INTRINSIC AND RADIATION-INDUCED DISORDER IN SINGLE CRYSTALLINE HIGH-TC YBA2CU3O7 THIN-FILMS

被引：31

作者：

MEYER, O

WESCHENFELDER, F

XI, XX

XIONG, GC

LINKER, G

GEERK, J

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 35卷 / 3-4期

关键词：

D O I：

10.1016/0168-583X(88)90285-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：292 / 300

页数：9

共 27 条

[1] PREPARATION AND CHARACTERIZATION OF SUPERCONDUCTING Y-BA-CU-O THIN-FILMS [J].

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[2] POSSIBLE HIGH-TC SUPERCONDUCTIVITY IN THE BA-LA-CU-O SYSTEM [J].

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[3] STRUCTURE OF THE SINGLE-PHASE HIGH-TEMPERATURE SUPERCONDUCTOR YBA2CU3O7-DELTA [J].

BENO, MA ;

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SCHULLER, IK ;

SEGRE, CU ;

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APPLIED PHYSICS LETTERS, 1987, 51 (01) :57-59

[4] CRITICAL-CURRENT MEASUREMENTS IN EPITAXIAL-FILMS OF YBA2CU3O7-X COMPOUND [J].

CHAUDHARI, P ;

KOCH, RH ;

LAIBOWITZ, RB ;

MCGUIRE, TR ;

GAMBINO, RJ .

PHYSICAL REVIEW LETTERS, 1987, 58 (25) :2684-2686

[5]

Chu W. K., 1978, BACKSCATTERING SPECT

[6] EFFECTS OF RADIATION-DAMAGE IN ION-IMPLANTED THIN-FILMS OF METAL-OXIDE SUPERCONDUCTORS [J].

CLARK, GJ ;

MARWICK, AD ;

KOCH, RH ;

LAIBOWITZ, RB .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :139-141

[7] PREPARATION OF Y-BA-CU OXIDE SUPERCONDUCTOR THIN-FILMS USING PULSED LASER EVAPORATION FROM HIGH-TC BULK MATERIAL [J].

DIJKKAMP, D ;

VENKATESAN, T ;

WU, XD ;

SHAHEEN, SA ;

JISRAWI, N ;

MINLEE, YH ;

MCLEAN, WL ;

CROFT, M .

APPLIED PHYSICS LETTERS, 1987, 51 (08) :619-621

[8] DIRECT OBSERVATION OF ELECTRONIC ANISOTROPY IN SINGLE-CRYSTAL Y1BA2CU3O7-X [J].

DINGER, TR ;

WORTHINGTON, TK ;

GALLAGHER, WJ ;

SANDSTROM, RL .

PHYSICAL REVIEW LETTERS, 1987, 58 (25) :2687-2690

[9] THE INFLUENCE OF IRRADIATION-INDUCED DEFECTS ON THE SUPERCONDUCTIVITY OF YBA2CU3O7 [J].

EGNER, B ;

GEERK, J ;

LI, HC ;

LINKER, G ;

MEYER, O ;

STREHLAU, B .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 :2141-2142

[10] STRAIN IN ULTRATHIN EPITAXIAL-FILMS OF GE/SI(100) MEASURED BY ION-SCATTERING AND CHANNELING [J].

FELDMAN, LC ;

BEVK, J ;

DAVIDSON, BA ;

GOSSMANN, HJ ;

MANNAERTS, JP .

PHYSICAL REVIEW LETTERS, 1987, 59 (06) :664-667

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