EXCHANGE AND CORRELATION POTENTIAL IN SILICON

被引：22

作者：

BENNETT, M ^{[1
]}

INKSON, JC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE, CAVENDISH LAB, TCM GRP, CAMBRIDGE CB3 OHE, ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 07期

关键词：

D O I：

10.1088/0022-3719/10/7/009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：987 / 999

页数：13

共 20 条

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[9] SCREENED EXCHANGE IN SEMICONDUCTORS
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[10] MANY-BODY EFFECTS AT METAL-SEMICONDUCTOR JUNCTIONS .1. SURFACE PLASMONS AND ELECTRON-ELECTRON SCREENED INTERACTION
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