CARBON INTERSTITIAL IN ELECTRON-IRRADIATED SILICON

[1] Bean A. R., 1970, Solid State Communications, V8, P175, DOI 10.1016/0038-1098(70)90074-8

[2] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &

[3] Brelot A., 1971, RAD EFFECTS SEMICOND, P161

[4] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617

[5] KIMERLING LC, 1976, B AM PHYS SOC, V21, P296

[6] KIMERLING LC, TO BE PUBLISHED

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[8] LEE YH, TO BE PUBLISHED

[9] NEWMAN RC, 1973, INFRARED STUDIES CRY, pCH7

[10] Stein H. J., 1971, Radiation Effects, V9, P195, DOI 10.1080/00337577108231050

[1] Bean A. R., 1970, Solid State Communications, V8, P175, DOI 10.1016/0038-1098(70)90074-8

[2] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &

[3] Brelot A., 1971, RAD EFFECTS SEMICOND, P161

[4] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617

[5] KIMERLING LC, 1976, B AM PHYS SOC, V21, P296

[6] KIMERLING LC, TO BE PUBLISHED

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[8] LEE YH, TO BE PUBLISHED

[9] NEWMAN RC, 1973, INFRARED STUDIES CRY, pCH7

[10] Stein H. J., 1971, Radiation Effects, V9, P195, DOI 10.1080/00337577108231050