A SIMPLE ANALYSIS OF TRANSFERRED ELECTRON OSCILLATORS

被引：6

作者：

HILSUM, C

机构：

来源：

BRITISH JOURNAL OF APPLIED PHYSICS | 1965年 / 16卷 / 09期

关键词：

D O I：

10.1088/0508-3443/16/9/423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1401 / &

共 5 条

[1] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

[2] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].

HILSUM, C .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&

[3] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J].

HUTSON, AR ;

JAYARAMAN, AG ;

CHYNOWETH, AG ;

CORIELL, AS ;

FELDMAN, WL .

[4] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].

RIDLEY, BK ;

WATKINS, TB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&

[5] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].

RIDLEY, BK .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530) :954-&