THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI

被引:153
作者
MOSLEHI, MM
SARASWAT, KC
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D O I
10.1109/T-ED.1985.21920
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:106 / 123
页数:18
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共 62 条
[1]   CHARACTERIZATION OF THERMALLY NITRIDED SILICON DIOXIDE [J].
AMANO, J ;
EKSTEDT, T .
APPLIED PHYSICS LETTERS, 1982, 41 (09) :816-818
[2]  
ANDREWS B, 1980, J APPL PHYS, V51
[3]  
AUCOIN R, 1981, ECS M
[4]  
CHANG S, 1984, 42ND DRC
[5]   CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON [J].
CHANG, ST ;
JOHNSON, NM ;
LYON, SA .
APPLIED PHYSICS LETTERS, 1984, 44 (03) :316-318
[6]  
CHANG T, 1984, 165TH ECS M
[7]  
Chang T. T. L., 1982, International Electron Devices Meeting. Technical Digest
[8]  
CHEN J, 1984, ECS M
[9]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[10]  
Ekstedt T. W., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P189