ATOMIC-STRUCTURE OF SHALLOW ACCEPTOR-HYDROGEN AND DONOR-HYDROGEN COMPLEXES IN GAAS

被引：27

作者：

CHANG, KJ

机构：

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 78卷 / 04期

关键词：

D O I：

10.1016/0038-1098(91)90196-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The microscopic structures of an interstitial hydrogen atom in p- and n-type GaAs are determined using an ab initio pseudopotential method. For Be impurities substituting Ga ions, hydrogen sitting at the bond-center site more strongly bonds to one of the neighboring As atoms than to the acceptor, while a direct donor-H bond takes place in Si-doped samples. This character of hydrogen bonding of passivated Si-H complexes is similar to that of Si-H bonds in n-type Si. For group VI donors such as S, hydrogen strongly interacts withthe neighboring host Ga breaking a donor-Ga bond.

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页码：273 / 277

页数：5

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