A THEORY OF THE HOOGE PARAMETERS OF SOLID-STATE DEVICES - COMMENTS

被引：5

作者：

BLACK, RD

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1109/T-ED.1986.22524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：532 / 533

页数：2

共 30 条

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[19] DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE [J].

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[20] TESTS OF GAUSSIAN STATISTICAL PROPERTIES OF 1/F NOISE [J].

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