OPTICAL BAND-GAP OF INDIUM NITRIDE

被引:581
作者
TANSLEY, TL
FOLEY, CP
机构
关键词
D O I
10.1063/1.336906
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3241 / 3244
页数:4
相关论文
共 20 条
[1]   BAND-STRUCTURE AND REFLECTIVITY OF GAN [J].
BLOOM, S ;
HARBEKE, G ;
MEIER, E ;
ORTENBUR.IB .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (01) :161-168
[2]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[3]   CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].
CASEY, HC ;
STERN, F .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643
[4]  
FOLEY CP, PHYS REV B
[5]   INFRARED ABSORPTION SPECTRUM OF GERMANIUM [J].
HALL, LH ;
BARDEEN, J ;
BLATT, FJ .
PHYSICAL REVIEW, 1954, 95 (02) :559-560
[6]   IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J].
HALPERIN, BI ;
LAX, M .
PHYSICAL REVIEW, 1966, 148 (02) :722-+
[7]   ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED GAN AND INN [J].
HOVEL, HJ ;
CUOMO, JJ .
APPLIED PHYSICS LETTERS, 1972, 20 (02) :71-&
[8]   INFRARED ABSORPTION OF INDIUM ANTIMONIDE [J].
KAISER, W ;
FAN, HY .
PHYSICAL REVIEW, 1955, 98 (04) :966-968
[9]   THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J].
KANE, EO .
PHYSICAL REVIEW, 1963, 131 (01) :79-&
[10]  
KRESSEL H, 1977, SEMICONDUCTOR LASERS, P18