ENDURANCE AND MEMORY DECAY OF MNOS DEVICES

被引：47

作者：

NEUGEBAUER, CA ^{[1
]}

BURGESS, JF ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3182 / 3191

页数：10

共 14 条

[1]

CRICCHI JR, 1973, IEDM TECH DIG, P126

[2]

Grove A. S., 1967, PHYS TECHNOL S, P280

[3] CHARGE STORAGE MISFET MEMORY DEVICES [J].

KIM, MJ .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (11) :1847-1858

[4] ELECTRICAL AND IRRADIATION PERFORMANCE OF MNOS-ARRAYS [J].

KIM, MJ ;

DOYLE, JT ;

PATTERSON, WJ ;

PAJAK, RW .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (11) :1837-1846

[5] DISCHARGE OF MNOS STRUCTURES [J].

LUNDKVIST, L ;

LUNDSTROM, I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1973, 16 (07) :811-+

[6] I-V CHARACTERISTICS OF MOS CAPACITORS WITH POLYCRYSTALLINE SILICON FIELD PLATES [J].

NEUGEBAUER, CA ;

BURGESS, JF ;

JOYNSON, RE ;

MUNDY, JL .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5041-5044

[7] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J].

NICOLLIA.EH ;

BERGLUND, CN ;

SCHMIDT, PF ;

ANDREWS, JM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5654-&

[8]

ROSS EC, 1970, RCA REV, V31, P467

[9]

SCHURMEYER F, COMMUNICATION

[10]

Simmons J G, 1970, HDB THIN FILM TECHNO, P14

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