EPITAXIAL-GROWTH OF UNDOPED AND MG-DOPED GAN

被引：56

作者：

SANO, M ^{[1
]}

AOKI, M ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT ELECTR ENGN,TOKYO 113,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 10期

关键词：

D O I：

10.1143/JJAP.15.1943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1943 / 1950

页数：8

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