QUANTUM CALCULATIONS OF THE CHANGE OF REFRACTIVE-INDEX DUE TO FREE-CARRIERS IN SILICON WITH NONPARABOLIC BAND-STRUCTURE

被引：25

作者：

HUANG, HC

YEE, S

SOMA, M

机构：

[1] Department of Electrical Engineering, University of Washington, Seattle

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.345586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quantum-mechanical approach used to calculate the change of refractive index, Δn, due to free carriers in various doped silicon is presented. This approach uses a numerical Kramers-Kronig relation to analyze a calculated carrier-related absorption spectrum below or near the energy-band gap. The absorption spectrum is obtained by considering the optical transitions between energy bands and impurity bands, and the free-carrier absorption due to acoustic phonons, optical phonons, and ionized impurities in a spherical nonparabolic band model. Values of Δn at wavelength λ=1.3 and 1.6 μm for different doping levels are obtained. The results are applicable to both the integrated-optics applications and optical-probing applications in silicon.

引用

页码：2033 / 2039

页数：7

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