CHARACTERIZATION OF GRAIN-BOUNDARIES IN SILICON SOLAR-CELLS .1. THE MEASUREMENT TECHNIQUE AND ITS RESTRICTIONS ON EVALUATION ACCURACY

被引：1

作者：

BOHM, M

SCHEER, HC

SEIFERT, W

WAGEMANN, HG

机构：

[1] FRAUNHOFER INST MIKROSTRUKTURTECH,D-1000 BERLIN 33,FED REP GER

[2] TECH UNIV BERLIN,INST WERKSTOFFE ELEKTROTECH,D-1000 BERLIN 12,FED REP GER

来源：

ARCHIV FUR ELEKTROTECHNIK | 1986年 / 69卷 / 06期

关键词：

D O I：

10.1007/BF01573890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：445 / 451

页数：7

共 9 条

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[5] INFLUENCE OF ILLUMINATION ON THE GRAIN-BOUNDARY RECOMBINATION VELOCITY IN SILICON [J].

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[6] DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J].

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SEAGER, CH .

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[7]

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[8] GRAIN-BOUNDARY STATES AND VARISTOR BEHAVIOR IN SILICON BICRYSTALS [J].

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APPLIED PHYSICS LETTERS, 1979, 35 (09) :709-711

[9]

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