BORON-NITRIDE POWDER COATING OF AMPOULE FOR BRIDGMAN-GROWN CUINSE2

被引：28

作者：

SHUKRI, ZA

CHAMPNESS, CH

SHIH, I

机构：

[1] Department of Electrical Engineering, McGill University, Montreal, Que. H3A 2A7

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 129卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90439-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

It is found that CuInSe2 grown by the Bridgman method results in ingots which adhere strongly to the inner walls of the quartz ampoule container. However, by coating the inside of the ampoule with a film of boron nitride powder and flaming it into the quartz prior to the introduction of the starting elements, the ingots showed no sticking whatsoever after growth. As a result of this technique, it has been possible to grow ingots of CuInSe2 which are void-free, crack-free, and contain monocrystals of centimeter dimensions.

引用

页码：107 / 110

页数：4

共 13 条

[1] PHASE-RELATIONS IN THE CU, IN, SE SYSTEM AND THE PROPERTIES OF CULNSE2 SINGLE-CRYSTALS [J].