SCREENING AND CARRIER BUNCHING IN 3-V COMPOUNDS

被引：2

作者：

QUEISSER, HJ

机构：

来源：

PHYSICS LETTERS | 1965年 / 18卷 / 02期

关键词：

D O I：

10.1016/0031-9163(65)90661-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：94 / &

共 6 条

[1] BROOKS H, 1956, ADVANCES ELECTRONICS, V7
[2] SCREENING EFFECTS IN POLAR SEMICONDUCTORS
EHRENREICH, H
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 130 - 135
[3] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
GUNN, JB
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &
[4] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT
HUTSON, AR
JAYARAMAN, AG
CHYNOWETH, AG
CORIELL, AS
FELDMAN, WL
[J]. PHYSICAL REVIEW LETTERS, 1965, 14 (16) : 639 - +
[5] MADELUNG O, 1964, PHYSICS 3V COMPOUNDS
[6] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS
RIDLEY, BK
WATKINS, TB
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &