RADIATION-INDUCED LEAKAGE CURRENTS IN SILICON ON SAPPHIRE MOS-TRANSISTORS

被引：5

作者：

WANG, ST ^{[1
]}

ROYCE, BSH ^{[1
]}

机构：

[1] PRINCETON UNIV,MAT LAB,PRINCETON,NJ 08540

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/TNS.1976.4328544

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1586 / 1589

页数：4

共 13 条

[1] RADIATION EFFECTS IN SILICA AT LOW TEMPERATURES [J].

ARNOLD, GW ;

COMPTON, WD .

PHYSICAL REVIEW, 1959, 116 (04) :802-811

[2]

DAMASK AC, 1963, POINT DEFECTS METALS, P146

[3] EFFECTS OF ELECTRON AND HOLE TRAPPING ON RADIATION HARDNESS OF AL2O3 MIS DEVICES [J].

HARARI, E ;

ROYCE, BSH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :280-287

[4] OPTICAL STUDIES OF BACK-CHANNEL LEAKAGE IN N-CHANNEL MOSFET ON SILICON-ON-SAPPHIRE (SOS) [J].

HARARI, E .

APPLIED PHYSICS LETTERS, 1976, 29 (01) :25-27

[5]

KAWAMURA S, TO BE PUBLISHED

[6] TRANSIENT PHOTOCURRENTS IN SOS STRUCTURES [J].

KJAR, RA ;

KINOSHITA, G .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :315-318

[7]

KJAR RA, 1974, IEEE T NUCL SCI, V21, P209

[8]

KRISTIANPOLLER N, TO BE PUBLISHED

[9]

MOTT NF, 1964, ELECTRONIC PROCESSES, P160

[10] RADIATION-INDUCED CHARGE TRAPPING AT SILICON SAPPHIRE SUBSTRATE INTERFACE [J].

NEAMEN, D ;

SHEDD, W ;

BUCHANAN, B .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :211-216

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