DOUBLE HETEROJUNCTION GAAS-GAALAS I2L INVERTER

被引：9

作者：

NAROZNY, P

BENEKING, H

机构：

[1] RWTH, Inst of Semiconductor, Electronics, Aachen, West Ger, RWTH, Inst of Semiconductor Electronics, Aachen, West Ger

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 08期

关键词：

LOGIC CIRCUITS; INTEGRATED INJECTION - TRANSISTORS; BIPOLAR; -; Heterojunctions;

D O I：

10.1049/el:19850232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs/GaAlAs double heterojunction I**2L inverters with a vertical pnp current source were fabricated by ion implantation and Zn-diffusion into LPE structures. The current gain of the upside-down-operated double heterojunction npn transistor has been improved by a factor of two compared to the gain of the npn transistor of the otherwise similar structure. In addition, the wide-gap junction pnp transistor gives a solution to the critical switch-on problem which can occur when a wide-gap emitter transistor is used for the switching transistor.

引用

页码：328 / 329

页数：2