SCINTILLATION CHARACTERISTICS OF PURE AND TL-DOPED CSI CRYSTALS

被引：177

作者：

SCHOTANUS, P ^{[1
]}

KAMERMANS, R ^{[1
]}

DORENBOS, P ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL, DELFT, NETHERLANDS

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 02期

关键词：

D O I：

10.1109/23.106614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The scintillation characteristics of pure and T1-doped CsI have been investigated. The scintillation light was detected with photomultipliers and silicon photodiodes. The influence of the T1 concentration on the light yield and on the decay times was studied upon excitation with γ-rays and α-particles. Furthermore, the origin of the different emission components is discussed. Copyright © 1990 by The Institute of Electrical and Electronics Engineers, Inc.

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页码：177 / 182

页数：6

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