DONOR-ACCEPTOR RECOMBINATION KINETICS IN AN EXACTLY COMPENSATED CRYSTAL - A MONTE-CARLO CALCULATION

被引：17

作者：

EGGERT, JR

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.29.6669

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6669 / 6671

页数：3

共 8 条

[1] [Anonymous], 1979, MONTE CARLO METHODS
[2] Dean P. J., 1973, PROGR SOLID STATE CH, V8, P1
[3] KINETICS OF DISTANT-PAIR RECOMBINATION .1. AMORPHOUS-SILICON LUMINESCENCE AT LOW-TEMPERATURE
DUNSTAN, DJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (06): : 579 - 594
[4] BIVALENT NEAREST-AVAILABLE-NEIGHBOR DISTRIBUTION IN N-DIMENSIONS - A MONTE-CARLO CALCULATION
EGGERT, JR
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6664 - 6668
[5] Gradshteyn I. S., 1980, TABLES OF INTEGRALS
[6] DISTRIBUTION OF RECOMBINATION LIFETIMES IN AMORPHOUS-SILICON
STREET, RA
BIEGELSEN, DK
[J]. SOLID STATE COMMUNICATIONS, 1982, 44 (04) : 501 - 505
[7] DONOR-ACCEPTOR PAIRS IN SEMICONDUCTORS
WILLIAMS, F
[J]. PHYSICA STATUS SOLIDI, 1968, 25 (02): : 493 - &
[8] [No title captured]